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| N-CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFETTM II POWER MOSFET Table 1: General Features TYPE STP20NF06 STF20NF06 STP20NF06 STF20NF06 Figure 1:Package RDS(on) < 0.07 < 0.07 ID 20 A 20 A(*) VDSS 60 V 60 V TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS DC MOTOR CONTROL DC-DC & DC-AC CONVERTERS Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STP20NF06 STF20NF06 MARKING P20NF06 F20NF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj to Rth value Parameter STP20NF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value STF20NF06 60 60 20 20 14 80 60 0.4 9 120 -55 to 175 20(*) 14(*) 80(*) 28 0.18 Unit V V V A A A W W/C V/ns mJ C (*) Pulse width limited by safe operating area. (*)Refer to soa for the max allowable current value on FP-type due December 2004 (1) ISD 20A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 10A, VDD= 30V Rev. 1 1/10 STP20NF06 STF20NF06 Table 4: THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 TO-220FP 5.35 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA Table 6: ON (5) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 10 A Min. 2 Typ. 3 0.06 Max. 4 0.07 Unit V Table 7: DYNAMIC Symbol gfs (5) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 8 A Min. Typ. 10 400 100 40 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/10 STP20NF06 STF20NF06 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 10 A VDD = 30 V VGS = 10 V RG = 4.7 (Resistive Load, Figure ) VDD= 30 V ID= 20 A VGS= 10 V Min. Typ. 5 15 14 3.0 5.5 18 Max. Unit ns ns nC nC nC Table 9: SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 30 V ID = 10 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 3) Min. Typ. 15 5 Max. Unit ns ns Table 10: SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1.5 %. Test Conditions Min. Typ. Max. 20 80 Unit A A V ns C A ISD = 20 A VGS = 0 50 80 3.2 1.5 ISD = 20 A di/dt = 100A/s Tj = 150C VDD = 20 V (see test circuit, Figure 5) (1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 s, duty cycle Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP 3/10 STP20NF06 STF20NF06 Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP Figure 7: Output Characteristics Figure 8: Transfer Characteristics Figure 9: Transconductance Figure 10: Static Drain-source On Resistance 4/10 STP20NF06 STF20NF06 Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 13: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized on Resistance vs Temperature Figure 15: Source-drain Diode Forward Characteristics Figure 16: Normalized Breakdown Voltage Temperature 5/10 STP20NF06 STF20NF06 Figure 17: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Waveform Figure 19: Switching Times Test Circuits For Resistive Load Figure 20: Gate Charge test Circuit Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP20NF06 STF20NF06 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 7/10 STP20NF06 STF20NF06 TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 8/10 G STP20NF06 STF20NF06 Table 11:Revision History Date 07-Nov-2004 Revision 1.0 FIRST ISSUE Description of Changes 9/10 STP20NF06 STF20NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. www.st.com 10/10 |
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